Contact hole structures and contact structures and fabrication methods thereof

Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-f...

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Main Authors Hsu, Ju-Wang, Shieh, Jyu-Horng, Su, Yi-Nien, Hsu, Peng-Fu, Tao, Hun-Jan
Format Patent
LanguageEnglish
Published 25.01.2011
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Abstract Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure.
AbstractList Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure.
Author Shieh, Jyu-Horng
Hsu, Ju-Wang
Hsu, Peng-Fu
Tao, Hun-Jan
Su, Yi-Nien
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References Linderer et al. (6455406) 20020900
Kakamu et al. (2004/0041267) 20040300
Sugiura et al. (2004/0164418) 20040800
Tsu et al. (6461955) 20021000
Burke (6458710) 20021000
Ueda (2002/0115310) 20020800
Liaw (2006/0019488) 20060100
Yin et al. (6939794) 20050900
Ye et al. (2006/0216926) 20060900
Hsieh et al. (6489227) 20021200
Yew et al. (2002/0130417) 20020900
Huang (6127260) 20001000
Lucas et al. (6287951) 20010900
(P2000-58538) 20000200
Abbott et al. (6900494) 20050500
Wachtler et al. (6274391) 20010800
Farrar (2002/0048931) 20020400
Shimizu et al. (2004/0004287) 20040100
Hasegawa et al. (2002/0058411) 20020500
Ye et al. (2004/0198062) 20041000
Tseng (2005/0035460) 20050200
Butler (5216281) 19930600
Liang et al. (5885865) 19990300
Chen et al. (6420226) 20020700
Otani et al. (2003/0193090) 20031000
Nallan et al. (2004/0058517) 20040300
Sugino et al. (2004/0084775) 20040500
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  ident: 6900494
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Snippet Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a...
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Title Contact hole structures and contact structures and fabrication methods thereof
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