Contact hole structures and contact structures and fabrication methods thereof

Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-f...

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Bibliographic Details
Main Authors Hsu, Ju-Wang, Shieh, Jyu-Horng, Su, Yi-Nien, Hsu, Peng-Fu, Tao, Hun-Jan
Format Patent
LanguageEnglish
Published 25.01.2011
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Summary:Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure.