Contact hole structures and contact structures and fabrication methods thereof
Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-f...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
25.01.2011
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Online Access | Get full text |
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Summary: | Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure. |
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