Nitride semiconductor device and method for fabricating the same
A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening....
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
04.01.2011
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| Online Access | Get full text |
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| Summary: | A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer. |
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