Method for fabricating last level copper-to-C4 connection with interfacial cap structure

The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and...

Full description

Saved in:
Bibliographic Details
Main Authors Daubenspeck, Timothy H, Landers, William F, Zupanski-Nielsen, Donna S
Format Patent
LanguageEnglish
Published 04.01.2011
Online AccessGet full text

Cover

More Information
Summary:The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect by a selective electroless plating process.