Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same
A method is provided for forming a self-aligned carbon nanotube (CNT) field effect transistor (FET). According to one feature, a self-aligned source-gate-drain (S-G-D) structure is formed that allows for the shrinking of the gate length to arbitrarily small values, thereby enabling ultra-high perfor...
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Main Author | |
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Format | Patent |
Language | English |
Published |
28.12.2010
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Online Access | Get full text |
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Summary: | A method is provided for forming a self-aligned carbon nanotube (CNT) field effect transistor (FET). According to one feature, a self-aligned source-gate-drain (S-G-D) structure is formed that allows for the shrinking of the gate length to arbitrarily small values, thereby enabling ultra-high performance CNT FETs. In accordance with another feature, an improved design of the gate to possess a "T"-shape, referred to as the "T-Gate," thereby enabling a reduction in gate resistance and further providing an increased power gain. The self-aligned T-gate CNT FET is formed using simple fabrication steps to ensure a low cost, high yield process. |
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