Semiconductor device and its manufacturing method

A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide...

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Bibliographic Details
Main Authors Kuo, Ching-Yeh, Cheng, Tsung-Chi, Lee, Yu-Chou, Shih, Yea-Chung, Tsao, Wen-Kuang, Chung, Hsiang-Hsien, Hsu, Hung-Yi, Chang, Jui-Chung
Format Patent
LanguageEnglish
Published 21.12.2010
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Summary:A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.