Methods of forming dual-damascene metal interconnect structures using multi-layer hard masks

Methods of forming dual-damascene metal interconnect structures include forming an electrically insulating layer on an integrated circuit substrate and then forming a hard mask layer on the electrically insulating layer. The hard mask layer may include a stacked composite of at least four electrical...

Full description

Saved in:
Bibliographic Details
Main Authors Oh, Young Mook, Choi, Youngjin
Format Patent
LanguageEnglish
Published 21.12.2010
Online AccessGet full text

Cover

More Information
Summary:Methods of forming dual-damascene metal interconnect structures include forming an electrically insulating layer on an integrated circuit substrate and then forming a hard mask layer on the electrically insulating layer. The hard mask layer may include a stacked composite of at least four electrically insulating material layers therein. The hard mask layer may also have separate trench and via patterns therein that are respectively defined by at least first and second ones of the electrically insulating material layers and at least third and fourth ones of the electrically insulating material layers.