Method for producing a micromechanical component having a thin-layer capping

3 A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClFetching through micropores in the silicon cap, an etching attack on the silicon cap is prevented, namely, either by particularly selective (app...

Full description

Saved in:
Bibliographic Details
Main Authors Kronmueller, Silvia, Fuchs, Tino, Feyh, Ando, Leinenbach, Christina, Lammer, Marco
Format Patent
LanguageEnglish
Published 14.12.2010
Online AccessGet full text

Cover

More Information
Summary:3 A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClFetching through micropores in the silicon cap, an etching attack on the silicon cap is prevented, namely, either by particularly selective (approximately 10,000:1 or higher) adjustment of the etching process itself, or by using the finding that the oxide of a germanium-rich layer, in contrast to oxidized porous silicon, is not stable but instead may be easily dissolved, to protect the silicon cap.