Method of verifying photomask data based on models of etch and lithography processes

A photomask dataset corresponding to a target-pattern is verified by simulating a resist-pattern that will be formed in a resist layer by a lithography process, simulating an etched-pattern that will be etched in a layer by a plasma process wherein said simulation comprises calculating a flux of par...

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Bibliographic Details
Main Authors Yenikaya, Bayram, Joshi, Devendra, Fornari, Paul A, Carrero, Jesus O, Sezginer, Abdurrahman
Format Patent
LanguageEnglish
Published 07.12.2010
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Summary:A photomask dataset corresponding to a target-pattern is verified by simulating a resist-pattern that will be formed in a resist layer by a lithography process, simulating an etched-pattern that will be etched in a layer by a plasma process wherein said simulation comprises calculating a flux of particles impacting a feature, and determining whether the etched-pattern substantially conforms to the target-pattern.