Via bottom contact and method of manufacturing same

A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further incl...

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Bibliographic Details
Main Authors Chanda, Kaushik, Clevenger, Lawrence A, Cowley, Andrew P, Gill, Jason P, Li, Baozhen, Yang, Chih-Chao
Format Patent
LanguageEnglish
Published 09.11.2010
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Summary:A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.