Semiconductor device and method of manufacturing the same

Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of active regions and a plurality of isolation regions between adjacent active regions, each active region including a groove, a bottom surface...

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Main Authors Joo, Kyung Joong, Kim, Han Soo
Format Patent
LanguageEnglish
Published 02.11.2010
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Abstract Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of active regions and a plurality of isolation regions between adjacent active regions, each active region including a groove, a bottom surface of the groove being below an upper surface of the active region.
AbstractList Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of active regions and a plurality of isolation regions between adjacent active regions, each active region including a groove, a bottom surface of the groove being below an upper surface of the active region.
Author Joo, Kyung Joong
Kim, Han Soo
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References (10-2006-0042460) 20060500
Lee et al. (2006/0180851) 20060800
(10-2001-0046068) 20010600
Tran (6844591) 20050100
Vidmantas et al. (6700154) 20040300
Wu (6048765) 20000400
Kim et al. (2005/0054163) 20050300
(10-2005-0043424) 20050500
Fastow et al. (6583479) 20030600
Bhattacharyya et al. (2006/0258090) 20061100
Lee et al. (2003/0047755) 20030300
(10-2005-0026319) 20050300
Werner (6373097) 20020400
Lin et al. (6437397) 20020800
Chang (2002/0055230) 20020500
He et al. (6825526) 20041100
(07-288324) 19951000
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Snippet Example embodiments are directed to a method of manufacturing a semiconductor device and a semiconductor device including a substrate including a plurality of...
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Title Semiconductor device and method of manufacturing the same
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