Phase change random access memory

A phase change random access (PRAM) memory may include a memory cell array having a plurality of phase change memory cells, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit configured to provide a sensing node with a compensation current to compensat...

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Bibliographic Details
Main Authors Oh, Hyung-rok, Cho, Woo-yeong, Cho, Beak-hyung
Format Patent
LanguageEnglish
Published 19.10.2010
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