Phase change random access memory

A phase change random access (PRAM) memory may include a memory cell array having a plurality of phase change memory cells, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit configured to provide a sensing node with a compensation current to compensat...

Full description

Saved in:
Bibliographic Details
Main Authors Oh, Hyung-rok, Cho, Woo-yeong, Cho, Beak-hyung
Format Patent
LanguageEnglish
Published 19.10.2010
Online AccessGet full text

Cover

More Information
Summary:A phase change random access (PRAM) memory may include a memory cell array having a plurality of phase change memory cells, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit configured to provide a sensing node with a compensation current to compensate for a decrease in a level of the sensing node caused by a current flowing through one of the plurality of phase change memory cells, and the sense amplifier configured to compare a level of the sensing node with a reference level and output a result of the comparison.