Method of making a multi-layered semiconductor device
In the multiple-layered semiconductor device and the method for manufacturing thereof according to the present invention, the resin is formed on the substrate around the semiconductor device, on which the semiconductor device is installed in the first semiconductor package. Therefore, a generation o...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
19.10.2010
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| Online Access | Get full text |
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| Summary: | In the multiple-layered semiconductor device and the method for manufacturing thereof according to the present invention, the resin is formed on the substrate around the semiconductor device, on which the semiconductor device is installed in the first semiconductor package. Therefore, a generation of a warpage of substrate is inhibited in the first semiconductor package. And since the first semiconductor package is stacked to and coupled to the second semiconductor package via the electric conductors that extend from the back surface of the second semiconductor package to the coupling lands on the substrate penetrating through the resin, a defective situation such as a coupling defective in the bump junction can be avoided when the junction of the second semiconductor package via the electric conductor is formed. Therefore, a considerably improved coupling reliability in the multiple-layered semiconductor device can be achieved. |
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