Semiconductor laser device

In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a second clad layer is formed on the active layer, the sum of products of strain amounts and film thickness in...

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Bibliographic Details
Main Authors Ukai, Tsutomu, Mannoh, Masaya
Format Patent
LanguageEnglish
Published 31.08.2010
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Summary:In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a second clad layer is formed on the active layer, the sum of products of strain amounts and film thickness in the active layer is set to a negative value.