Vortex chamber lids for atomic layer deposition

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a c...

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Bibliographic Details
Main Authors Wu, Dien-Yeh, Bajaj, Puneet, Yuan, Xiaoxiong, Kim, Steven H, Chu, Schubert S, Ma, Paul F, Aubuchon, Joseph F
Format Patent
LanguageEnglish
Published 24.08.2010
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Summary:Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.