Image sensor having an RPO layer containing nitrogen

A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist prote...

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Main Authors Liang, Yao Hsiang, Cheng, Wen-Kung, Fan, Chen-Peng, Chen, Ming-Hsien, Chen, Richard, Yang, Jung-Chen, Ho, Wen-Yu, Li, Chao-Keng, Chang, Yong-Sin, Chang, Labo
Format Patent
LanguageEnglish
Published 10.08.2010
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Summary:A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.