Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors

A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to...

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Bibliographic Details
Main Authors Pickrell, Gregory, Louderback, Duane A, Guilfoyle, Peter
Format Patent
LanguageEnglish
Published 03.08.2010
Online AccessGet full text

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