Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors

A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to...

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Bibliographic Details
Main Authors Pickrell, Gregory, Louderback, Duane A, Guilfoyle, Peter
Format Patent
LanguageEnglish
Published 03.08.2010
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Summary:A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.