Shallow trench isolation structure for semiconductor device

A semiconductor device provides a transistor adjacent an isolation trench. The device may be formed by producing isolation trenches in a semiconductor substrate, filling the trenches with a filler material, creating voids near top edges of the trenches and annealing by a gaseous ambient to reflow th...

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Bibliographic Details
Main Authors Ko, Chih-Hsin, Ke, Chung-Hu, Huang, Chien-Chao
Format Patent
LanguageEnglish
Published 29.06.2010
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Summary:A semiconductor device provides a transistor adjacent an isolation trench. The device may be formed by producing isolation trenches in a semiconductor substrate, filling the trenches with a filler material, creating voids near top edges of the trenches and annealing by a gaseous ambient to reflow the edges of the trenches causing the edges to become rounded and overhang the trench. The filler material may be a dielectric. The transistors which are then formed in close proximity to the trenches may include source/drain regions formed in the rounded portion of the semiconductor substrate that overhangs the trench.