Wiring structure of a semiconductor device, method of forming the wiring structure, non-volatile memory device including the wiring structure, and method of manufacturing the non-volatile memory device

A wiring structure of a semiconductor device may include an insulation interlayer on a substrate, the insulation interlayer having a linear first trench having a first width and a linear second trench having a second width, the linear second trench being in communication with a lower portion of the...

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Bibliographic Details
Main Authors Koh, Young-Ho, Chung, Byung-Hong, Kim, Won-Jin, Park, Hyun, Min, Ji-Young
Format Patent
LanguageEnglish
Published 29.06.2010
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Summary:A wiring structure of a semiconductor device may include an insulation interlayer on a substrate, the insulation interlayer having a linear first trench having a first width and a linear second trench having a second width, the linear second trench being in communication with a lower portion of the linear first trench, the first width being wider than the second width, and a conductive layer pattern in the linear first and second trenches.