InGaAIN light-emitting device containing carbon-based substrate and method for making the same

One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate c...

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Main Authors Xiong, Chuanbing, Jiang, Fengyi, Wang, Li, Tang, Yingwen, Zheng, Changda, Liu, Junlin, Liu, Weihua, Wang, Guping
Format Patent
LanguageEnglish
Published 22.06.2010
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Abstract One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.
AbstractList One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.
Author Tang, Yingwen
Wang, Guping
Wang, Li
Zheng, Changda
Liu, Weihua
Jiang, Fengyi
Liu, Junlin
Xiong, Chuanbing
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References Uemoto (5389799) 19950200
Takayama (2005/0161698) 20050700
Kraft (2002/0110282) 20020800
Fukushima (2004/0241447) 20041200
Inoue (2005/0006664) 20050100
Thomson et al. (2008/0157090) 20080700
Pinnington et al. (2006/0255341) 20061100
(2007-35898) 20070200
Takayama (6521917) 20030200
Takayama (6903364) 20050600
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Snippet One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer...
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