InGaAIN light-emitting device containing carbon-based substrate and method for making the same

One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate c...

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Bibliographic Details
Main Authors Xiong, Chuanbing, Jiang, Fengyi, Wang, Li, Tang, Yingwen, Zheng, Changda, Liu, Junlin, Liu, Weihua, Wang, Guping
Format Patent
LanguageEnglish
Published 22.06.2010
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Summary:One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.