Method for dopant calibration of delta doped multilayered structure

In a calibration method, the relation between dopant concentrations of δ-doping layers in a multilayered semiconductor structure and process parameters is determined S based on multiple bulk specimens of the material in which the δ-doping layers are located. A desired dopant concentration is selecte...

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Bibliographic Details
Main Authors De Souza, Patricia Lustoza, Tribuzy, Christiana Villas-Bôas, Pires, Maurício Pamplona, Landi, Sandra Marcela
Format Patent
LanguageEnglish
Published 25.05.2010
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Summary:In a calibration method, the relation between dopant concentrations of δ-doping layers in a multilayered semiconductor structure and process parameters is determined S based on multiple bulk specimens of the material in which the δ-doping layers are located. A desired dopant concentration is selected S, and the semiconductor structure with predetermined doping levels can be generated S based on the relation between the process parameters and the predetermined doping concentrations.