Cascode power switch topologies

A normally-off cascode power switch circuit is disclosed fabricated in wide bandgap semiconductor material such as silicon carbide or gallium nitride and which is capable of conducting current in the forward and reverse direction under the influence of a positive gate bias. The switch includes casco...

Full description

Saved in:
Bibliographic Details
Main Authors McNutt, Ty R, Reichl, John V, Heame, III, Harold C, Stewart, Eric J, Van Campen, Stephen D, Veliadis, Victor D
Format Patent
LanguageEnglish
Published 18.05.2010
Online AccessGet full text

Cover

Loading…
More Information
Summary:A normally-off cascode power switch circuit is disclosed fabricated in wide bandgap semiconductor material such as silicon carbide or gallium nitride and which is capable of conducting current in the forward and reverse direction under the influence of a positive gate bias. The switch includes cascoded junction field effect transistors (JFETs) that enable increased gain, and hence blocking voltage, while minimizing specific on-resistance.