Method and structure for forming strained Si for CMOS devices

A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under a...

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Bibliographic Details
Main Authors Steegen, An L, Yang, Haining S, Zhang, Ying
Format Patent
LanguageEnglish
Published 20.04.2010
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Summary:A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.