Process for manufacturing epitaxial wafers for integrated devices on a common compound semiconductor III-V wafer

A method of fabricating an epitaxial compound semiconductor III-V wafer suitable for the subsequent fabrication of at least two different types of integrated active devices (such as an HBT and a FET) on such wafer by providing a substrate; growing a first epitaxial structure on the substrate; and gr...

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Bibliographic Details
Main Authors Cooke, Paul, Hoffman, Jr, Richard W, Labyuk, Victor, Ye, Sherry Qianwen
Format Patent
LanguageEnglish
Published 20.04.2010
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Summary:A method of fabricating an epitaxial compound semiconductor III-V wafer suitable for the subsequent fabrication of at least two different types of integrated active devices (such as an HBT and a FET) on such wafer by providing a substrate; growing a first epitaxial structure on the substrate; and growing a second epitaxial structure on the first epitaxial structure.