Method for co-alignment of mixed optical and electron beam lithographic fabrication levels

A method for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target including a high atomic weight layer formed in a substrate and forming the first set of features using electron beam lithography and for aligning a second set of fe...

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Bibliographic Details
Main Authors Fried, David Michael, Hergenrother, John Michael, McNab, Sharee Jane, Rooks, Michael J, Topol, Anna
Format Patent
LanguageEnglish
Published 13.04.2010
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Summary:A method for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target including a high atomic weight layer formed in a substrate and forming the first set of features using electron beam lithography and for aligning a second set of features of the same fabrication level of the integrated circuit chip to an optical alignment target formed in the substrate and forming the second set of features using photolithography, the optical alignment target itself is aligned to the electron beam alignment target. Also a method of forming and a structure of the electron beam alignment target.