Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof

a b a aa a. A lower electrode layer , an upper electrode layer formed above the lower electrode layer , and a metal oxide thin film layer formed between the lower electrode layer and the upper electrode layer are provided. The metal oxide thin film layer includes a first region whose value of resist...

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Bibliographic Details
Main Authors Kawashima, Yoshio, Takagi, Takeshi, Mikawa, Takumi, Wei, Zhiqiang
Format Patent
LanguageEnglish
Published 06.04.2010
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Summary:a b a aa a. A lower electrode layer , an upper electrode layer formed above the lower electrode layer , and a metal oxide thin film layer formed between the lower electrode layer and the upper electrode layer are provided. The metal oxide thin film layer includes a first region whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer and the upper electrode layer and a second region arranged around the first region and having a larger content of oxygen than the first region , wherein the lower and upper electrode layers and and at least a part of the first region are arranged so as to overlap as viewed from the direction of the thickness of the first region