Field-effect transistor

A field-effect transistor has a so-called double heterostructure which is formed such that a channel layer through which electrons travel is provided between an electron supply layer and a liner layer, wherein a forbidden band width of the liner layer and a forbidden band width of the electron suppl...

Full description

Saved in:
Bibliographic Details
Main Authors Matsuo, Hisayoshi, Ueda, Tetsuzo
Format Patent
LanguageEnglish
Published 30.03.2010
Online AccessGet full text

Cover

More Information
Summary:A field-effect transistor has a so-called double heterostructure which is formed such that a channel layer through which electrons travel is provided between an electron supply layer and a liner layer, wherein a forbidden band width of the liner layer and a forbidden band width of the electron supply layer are broader than a forbidden bandwidth of the channel layer.