Semiconductor device and method of manufacturing the same

A semiconductor device includes: a semiconductor substrate; multiple active regions of a first conductive type isolated from one another by shallow-trench isolation regions provided on one surface of the semiconductor substrate; multiple silicon pillars including channel silicon pillars formed in th...

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Main Author Oyu, Kiyonori
Format Patent
LanguageEnglish
Published 30.03.2010
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Abstract A semiconductor device includes: a semiconductor substrate; multiple active regions of a first conductive type isolated from one another by shallow-trench isolation regions provided on one surface of the semiconductor substrate; multiple silicon pillars including channel silicon pillars formed in the active regions; multiple first semiconductor regions of a second conductive type that are respectively formed on bottom ends of the silicon pillars and to be sources or drains; multiple second semiconductor regions of the second conductive type that are formed on top ends of the silicon pillars and to be sources or drains; multiple gate insulating films surrounding the silicon pillars; and multiple gate electrodes surrounding the gate insulating films. At least one of the channel silicon pillars has a height different from that of another one of the channel silicon pillars.
AbstractList A semiconductor device includes: a semiconductor substrate; multiple active regions of a first conductive type isolated from one another by shallow-trench isolation regions provided on one surface of the semiconductor substrate; multiple silicon pillars including channel silicon pillars formed in the active regions; multiple first semiconductor regions of a second conductive type that are respectively formed on bottom ends of the silicon pillars and to be sources or drains; multiple second semiconductor regions of the second conductive type that are formed on top ends of the silicon pillars and to be sources or drains; multiple gate insulating films surrounding the silicon pillars; and multiple gate electrodes surrounding the gate insulating films. At least one of the channel silicon pillars has a height different from that of another one of the channel silicon pillars.
Author Oyu, Kiyonori
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Snippet A semiconductor device includes: a semiconductor substrate; multiple active regions of a first conductive type isolated from one another by shallow-trench...
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Title Semiconductor device and method of manufacturing the same
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