Semiconductor device and method of manufacturing the same
A semiconductor device includes: a semiconductor substrate; multiple active regions of a first conductive type isolated from one another by shallow-trench isolation regions provided on one surface of the semiconductor substrate; multiple silicon pillars including channel silicon pillars formed in th...
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| Format | Patent |
| Language | English |
| Published |
30.03.2010
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| Online Access | Get full text |
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| Summary: | A semiconductor device includes: a semiconductor substrate; multiple active regions of a first conductive type isolated from one another by shallow-trench isolation regions provided on one surface of the semiconductor substrate; multiple silicon pillars including channel silicon pillars formed in the active regions; multiple first semiconductor regions of a second conductive type that are respectively formed on bottom ends of the silicon pillars and to be sources or drains; multiple second semiconductor regions of the second conductive type that are formed on top ends of the silicon pillars and to be sources or drains; multiple gate insulating films surrounding the silicon pillars; and multiple gate electrodes surrounding the gate insulating films. At least one of the channel silicon pillars has a height different from that of another one of the channel silicon pillars. |
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