System and method for photolithography in semiconductor manufacturing

A method for photolithography in semiconductor device manufacturing comprises defining test critical dimension target for a photolithography mask, measuring a mask critical dimension, comparing mask critical dimension to the test critical dimension target and determining a critical dimension deviati...

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Bibliographic Details
Main Authors Lin, Shui-Tien, Lu, Shin-Rung, Lo, Yi-Chuan
Format Patent
LanguageEnglish
Published 30.03.2010
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Summary:A method for photolithography in semiconductor device manufacturing comprises defining test critical dimension target for a photolithography mask, measuring a mask critical dimension, comparing mask critical dimension to the test critical dimension target and determining a critical dimension deviation, determining a photolithography light base energy in response to the critical dimension deviation, and exposing the wafer according to the photolithography light base energy.