Non-volatile memory device
A non-volatile memory device may include at least one string, at least one bit line corresponding to the at least one string, and/or a sensing transistor. The at least one string may include a plurality of memory cell transistors connected in series. The sensing transistor may include a gate configu...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
02.03.2010
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| Online Access | Get full text |
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| Summary: | A non-volatile memory device may include at least one string, at least one bit line corresponding to the at least one string, and/or a sensing transistor. The at least one string may include a plurality of memory cell transistors connected in series. The sensing transistor may include a gate configured to sense a voltage of the corresponding bit line. A threshold voltage of the sensing transistor may be higher than a voltage obtained by subtracting a given voltage from a voltage applied to read the corresponding bit line connected to a memory cell transistor to be read of the plurality of memory cell transistors. |
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