Phase change random access memory device

In a phase-change random access memory (PRAM) device, a write operation is performed by applying a set pulse to failed PRAM cells. The set pulse comprises a plurality of stages sequentially decreasing from a first current magnitude to a second current magnitude. The first current magnitude or the se...

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Bibliographic Details
Main Authors Park, Mu-hui, Cho, Beak-hyung, Oh, Hyung-rok
Format Patent
LanguageEnglish
Published 02.03.2010
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Summary:In a phase-change random access memory (PRAM) device, a write operation is performed by applying a set pulse to failed PRAM cells. The set pulse comprises a plurality of stages sequentially decreasing from a first current magnitude to a second current magnitude. The first current magnitude or the second current magnitude varies from one write loop to another.