Semiconductor laser device and method for manufacturing the same semiconductor laser device

A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-type InP current blocking layer is co...

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Bibliographic Details
Main Author Watatani, Chikara
Format Patent
LanguageEnglish
Published 02.02.2010
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Summary:A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-type InP current blocking layer is covered with the p-type InP buried layer and the p-type InP current blocking layer. The n-type InP current blocking layer is prevented from contacting n-type and p-type InP cladding layers. Creation of an ineffective current path from one of the n-type InP cladding layers through the n-type InP current blocking layer to a p-type InP cladding layer of the semiconductor laser is prevented.