Antireflection film and exposure method

1 2 11221210101020202011122 2 1101m1021101m1021101m1022202m2022202m2022202m202An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silic...

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Bibliographic Details
Main Authors Matsuzawa, Nobuyuki, Watanabe, Yoko, Thunnakart, Boontarika, Ozawa, Ken, Yamaguchi, Yuko
Format Patent
LanguageEnglish
Published 02.02.2010
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Summary:1 2 11221210101020202011122 2 1101m1021101m1021101m1022202m2022202m2022202m202An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices Nand Nand film thicknesses of upper and lower layers of the antireflection film are represented by n-ki, n-ki and d, d, respectively, and a predetermined combination of values of [n, k, d, n, k, d] is selected, n, k, d, n, kand dsatisfy {(n-n)/(n-n)}+{(k-k)/(k-k)}+{(d-d)/(d-d)}+{(n-n)/(n-n)}+{(k-k)/(k-k)}+{(d-d)/(d-d)}≦1.