Method of making a semiconductor device

One or more embodiments relate to a method of making a heterojunction bipolar transistor (HBT) structure. The method includes: forming a partially completed heterojunction bipolar transistor (HBT) structure where the partially completed heterojunction bipolar transistor (HBT) structure includes a si...

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Bibliographic Details
Main Author Wilhelm, Detlef
Format Patent
LanguageEnglish
Published 12.01.2010
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Summary:One or more embodiments relate to a method of making a heterojunction bipolar transistor (HBT) structure. The method includes: forming a partially completed heterojunction bipolar transistor (HBT) structure where the partially completed heterojunction bipolar transistor (HBT) structure includes a silicon layer having an exposed surface and a nitride layer having an exposed surface. The method includes growing a first oxide on the silicon layer and etching the nitride layer using an etchant.