Double density NROM with nitride strips (DDNS)

An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or "strips" (or "stripes"). This provides having two physically separated charge st...

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Bibliographic Details
Main Authors Irani, Rustom, Eitan, Boaz, Bloom, Ilan, Shappir, Assaf
Format Patent
LanguageEnglish
Published 29.12.2009
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Summary:An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or "strips" (or "stripes"). This provides having two physically separated charge storage regions (nitride "strips", or "stripes") in each memory cell.