Method for reducing dislocation threading using a suppression implant

The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression impl...

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Bibliographic Details
Main Authors Mollat, Martin, Chatterjee, Tathagata, Edwards, Henry L, Robertson, Lance S, Irwin, Richard B, Hu, Binghua
Format Patent
LanguageEnglish
Published 29.12.2009
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Summary:The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the doped well and configured to reduce threading dislocations.