High voltage sensor device

In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element.

Saved in:
Bibliographic Details
Main Authors Hall, Jefferson W, Quddus, Mohammed Tanvir
Format Patent
LanguageEnglish
Published 29.12.2009
Online AccessGet full text

Cover

More Information
Summary:In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element.