Method and apparatus for forming expitaxial layers

The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical Vapor Deposition apparatus compris...

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Bibliographic Details
Main Authors Meunier-Beillard, Philippe, Caymax, Mathieu Rosa Jozef
Format Patent
LanguageEnglish
Published 10.11.2009
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Summary:The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical Vapor Deposition apparatus comprising a chamber having a gas input port and a gas output port, and means for mounting a silicon substrate within the chamber, said apparatus further including a gas source connected to the input port and arranged to provide nitrogen or a noble gas as a carrier gas.