Reducing resistivity in interconnect structures by forming an inter-layer

An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, and a damascene structure in the opening. The damascene structure includes a metallic barrier...

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Bibliographic Details
Main Authors Shih, Chih-Chao, Huang, Cheng-Lin, Hsieh, Ching-Hua, Shue, Shau-Lin
Format Patent
LanguageEnglish
Published 03.11.2009
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Summary:An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, and a damascene structure in the opening. The damascene structure includes a metallic barrier layer in the opening and in physical contact with the dielectric layer, a conductive material filling the remaining part of the opening, and an interlayer between and adjoining the metallic barrier layer and the conductive material. The interlayer is preferably a metal compound layer.