Method for photoresist stripping and treatment of low-k dielectric material

2 2 2 A plasma processing operation uses a gas mixture of Nand Hto both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photores...

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Bibliographic Details
Main Authors Tsai, Jang-Shiang, Su, Yi-Nien, Ko, Chung-Chi, Shieh, Jyu-Horng, Hsu, Peng-Fu, Tao, Hun-Jan
Format Patent
LanguageEnglish
Published 06.10.2009
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Summary:2 2 2 A plasma processing operation uses a gas mixture of Nand Hto both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresist layer is activated and caused to complex with the low-k dielectric, maintaining a suitably high carbon content and a suitably low dielectric constant. The plasma processing operation uses a gas mixture with Hconstituting at least 10%, by volume, of the gas mixture.