Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same

4223The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NHOH), hydrogen peroxide (HO) an...

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Bibliographic Details
Main Authors Lee, Keum-Joo, Bae, Jin-Hye, Kang, Dae-Keun
Format Patent
LanguageEnglish
Published 01.09.2009
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Summary:4223The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NHOH), hydrogen peroxide (HO) and deionized (DI) water, and a second cleaning solution including ozone (O) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.