Method for fabricating light emitting diode element

The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which c...

Full description

Saved in:
Bibliographic Details
Main Authors Hsu, Wen-Chieh, Liu, Yu-Chuan, Fu, Jenn-Hwa, Lee, Shih-Hung, Wang, Tai-Chun
Format Patent
LanguageEnglish
Published 25.08.2009
Online AccessGet full text

Cover

More Information
Summary:The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.