Low resistance and inductance backside through vias and methods of fabricating same

• Main Authors: Erturk, Mete, Groves, Robert A, Johnson, Jeffrey Bowman, Joseph, Alvin Jose, Liu, Qizhi, Sprogis, Edmund Juris, Stamper, Anthony Kendall
• Format: Patent
• Language: English
• Published: 21.07.2009

A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation in a substrate, the substrate having a frontside and an opposing backside; forming a first dielectric layer on the frontside of the substrate; forming a trench in the first dielectric layer, the trench aligned over and within a perimeter Of the dielectric isolation and extending to the dielectric isolation; extending the trench formed in the first dielectric layer through the dielectric isolation and into the substrate to a depth less than a thickness of the substrate; filling the trench and co-planarizing a top surface of the trench with a top surface of the first dielectric layer to form an electrically conductive through via; and thinning the substrate from a backside of the substrate to expose the through via.