Method of fabrication of interconnect structures

A method of forming a damascene wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench...

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Bibliographic Details
Main Authors Yang, Chih-Chao, Clevenger, Lawrence A, Cowley, Andrew P, Dalton, Timothy J, Yoon, Meeyoung H
Format Patent
LanguageEnglish
Published 21.07.2009
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Summary:A method of forming a damascene wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor.