Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a...

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Bibliographic Details
Main Authors Kawasaki, Atsuko, Hoshi, Takeshi, Kiyotoshi, Masahiro, Ono, Takatoshi, Ogawa, Yoshihiro, Umezawa, Kaori
Format Patent
LanguageEnglish
Published 26.05.2009
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Summary:A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.